technology, announced today that it has made a significant advancement
in the push for higher volume memory chips by developing the world's
first four gigabit (Gb) DDR3 DRAM chip, using 50 nanometer (nm)
process technology.
With more and more data centers seeking a reduction in the number of
servers they use, the development of low-power 4Gb DDR3 has become
critical in reducing data center costs, improving server time
management and increasing overall efficiency.
For the new generation of "green" servers, the 4Gb DDR3's high density
combined with its lower level of power consumption will not only
provide a reduction in electricity bills, but also a cutback in
installment fees, maintenance fees and repair fees involving power
suppliers and heat-emitting equipment.
"We have leveraged our strength in innovation to develop the first 4Gb
DDR3, in leading the industry to higher DRAM densities," said Kevin
Lee, vice president, technical marketing, Samsung Semiconductor, Inc.
"By designing our 4Gb DDR3 using state-of-the-art 50-nm class
technology, we are setting the stage for what ultimately will result
in significant cost-savings, for servers and for the overall computing
market," he added.
The 4Gb DDR3 can be produced in 16 gigabyte (GB) registered dual
in-line memory modules (RDIMM) for servers, as well as 8GB unbuffered
DIMM (UDIMM) for workstations and desktop PCs, and 8GB small outline
DIMM (SODIMM) for laptops. By applying dual-die package technology,
this new device can deliver modules of up to 32GB – offering twice as
much capacity as memory modules based on the previous highest chip
density of 2Gb.
Designed to be low-powered, the 4Gb DDR3 DRAM operates at 1.35 volts
(V), therein improving its throughput by 20 percent over a 1.5V DDR3.
Its maximum speed is 1.6 gigabits per second (Gbps).
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